DETERMINATION OF BORON CONCENTRATION PROFILES IN SILICON FROM ¹⁰B(N, ALPHA )⁷LI REACTION PRODUCT SPECTRAKVITEK J; HNATOWICZ V; KOTAS P et al.1976; RADIOCHEM. RADIOANAL. LETTERS; SWITZ.; DA. 1976; VOL. 24; NO 3; PP. 205-213; BIBL. 4 REF.Article

A TELESCOPE FOR ALPHA -PARTICLE SPECTROMETRY.KVITEK J; HOFFMANN J; KOSINA Z et al.1975; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1975; VOL. 25; NO 8; PP. 854-858; BIBL. 12 REF.Article

TO THE POSSIBILITY OF ELEMENT DETERMINATION USING RADIATION CAPTURE OF 2 KEV NEUTRONSCERVENA J; KVITEK J; HONZATKO J et al.1979; RADIOCHEM. RADIOANAL. LETTERS; CHE; DA. 1979; VOL. 38; NO 5-6; PP. 321-324; BIBL. 2 REF.Article

DETERMINATION OF ARSENIC, ANTIMONY, AND BISMUTH IN SILICON USING 200 KEV ALPHA -PARTICLE BACKSCATTERINGHNATOWICZ V; KVITEK J; KREJCI P et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 323-328; ABS. GER; BIBL. 8 REF.Article

THE USE OF THE NEUTRON INDUCED REACTION FOR BORON PROFILING IN SICERVENA J; HNATOWICZ V; HOFFMANN J et al.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 188; NO 1; PP. 185-189; BIBL. 9 REF.Article

STUDY OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR SILICON BY ACTIVATION ANALYSIS AND NUCLEAR REACTION METHODSKOTAS P; OBRUSNIK I; KVITEK J et al.1976; J. RADIOANAL. CHEM.; SWITZ.; DA. 1976; VOL. 30; NO 2; PP. 475-488; BIBL. 21 REF.Article

The influence of implantation conditions on the surface structure of polypropyleneSVORCIK, V; RYBKA, V; HNATOWICZ, V et al.Journal of applied polymer science. 1993, Vol 49, Num 7, pp 1299-1301, issn 0021-8995Article

Long term changes of polypropylene implanted with I⁺ ionsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.European polymer journal. 1995, Vol 31, Num 5, pp 449-451, issn 0014-3057Article

Oxidation of polyethylene implanted with As ions to different extentsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.European polymer journal. 1993, Vol 29, Num 9, pp 1255-1258, issn 0014-3057Article

A Pascal program for the least-squares evaluation of standard RBS spectraHNATOWICZ, V; HAVRANEK, V; KVITEK, J et al.Computer physics communications. 1992, Vol 72, Num 2-3, pp 295-303, issn 0010-4655Article

Oxygen incorporation in polyethylene implanted with 150 keV Sb⁺ ionsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.Czechoslovak journal of physics. 1994, Vol 44, Num 6, pp 621-627, issn 0011-4626Article

Ion implantation into polyethyleneSVORCIK, V; RYBKA, V; ENDRST, R et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 2, pp 542-544, issn 0013-4651Article

Application of iterative deconvolution procedures for evaluation of boron depth profilesCERVENA, J; HNATOWICZ, V; KVITEK, J et al.Czechoslovak journal of physics. 1985, Vol 35, Num 4, pp 413-419, issn 0011-4626Article

Depth distribution of boron and radiation defects in silicon dual implanted with B⁺ and N⁺ ionsODZHAEV, V. B; POPOK, V. N; CERVENA, J et al.Physica status solidi. A. Applied research. 1995, Vol 147, Num 1, pp 91-97, issn 0031-8965Article

Ion implantation enhanced adhesion of polypropyleneSVORCIK, V; RYBKA, V; SEIDL, P et al.Materials letters (General ed.). 1992, Vol 12, Num 6, pp 434-436, issn 0167-577XArticle

Multielemental trace analysis by proton induced X-ray fluorescenceHNATOWICZ, V; KVITEK, J; DZMURAN, R et al.Czechoslovak journal of physics. 1984, Vol 34, Num 12, pp 1315-1323, issn 0011-4626Article

Laser annealing of GaAs dual implanted with Si and P ionsRYBKA, V; ODZHAYEV, V; CERVENA, J et al.Czechoslovak journal of physics. 1987, Vol B37, Num 8, pp 919-923, issn 0011-4626Article

Laser annealing of bismuth-implanted (111) siliconRYBKA, V; ODZHAEV, V; CERVENA, J et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp 511-515, issn 0031-8965Article

Accumulation of boron-10 (¹⁰B) in cell cultures exposed to mercaptododecaborate (Na₂H₁₁¹⁰B₁₂SH) used for the neutron capture therapy of brain tumorsMARES, V; BAUDYSOVA, M; KVITEK, J et al.The Journal of pharmacology and experimental therapeutics. 1992, Vol 262, Num 2, pp 818-822, issn 0022-3565Article

Ion implantation into polypropyleneSVORCIK, V; RYBKA, V; VOLKA, K et al.Japanese journal of applied physics. 1992, Vol 31, Num 3A, pp L287-L290, issn 0021-4922, 2Article

Channeling measurement of residual damage in siliconHNATOWICZ, V; KVITEK, J; DZMURAN, R et al.Czechoslovak journal of physics. 1985, Vol 35, Num 4, pp 465-468, issn 0011-4626Article

Effect of processing parameters on the properties of hydroxylapatite films grown by pulsed laser depositionJELINEK, M; OLSAN, V; HONTZOPOULOS, E et al.Thin solid films. 1995, Vol 257, Num 1, pp 125-129, issn 0040-6090Article